SI2308BDS-T1-GE3

Part No :: SI2308BDS-T1-GE3

Manufacturer: Vishay / Siliconix

VIGOR # :: 2903874

Description: MOSFET N-CH 60V 2.3A SOT23-3

Catalog: Transistors - FETs, MOSFETs - Single

DataSheet: SI2308BDS-T1-GE3 PDF

Country of origin: -

Date code: -

SI2308BDS-T1-GE3 Specifications

Type	Description
Series:	TrenchFET®
Package:	Tape & Reel (TR)Cut Tape (CT)
Part Status:	Active
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	60 V
Current - Continuous Drain (Id) @ 25°C:	2.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Rds On (Max) @ Id, Vgs:	156mOhm @ 1.9A, 10V
Vgs(th) (Max) @ Id:	3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	6.8 nC @ 10 V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	190 pF @ 30 V
FET Feature:	-
Power Dissipation (Max):	1.09W (Ta), 1.66W (Tc)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	SOT-23-3 (TO-236)
Package / Case:	TO-236-3, SC-59, SOT-23-3

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Delivery time: At the same day (Order deadline is 2pm, HK Time).
Delivery date: usually 2 to 7 working days.
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In Stock: 39614

Shipped from

HK warehouse

Expected Shipping Date

Jul 21 - Jul 25 2026

Pricing(USD)

Quantity	Unit Price	Ext. Price
1	~~$0.5700~~	~~$0.57~~
3000	~~$0.2074~~	~~$622.17~~
6000	~~$0.1940~~	~~$1 164.12~~
15000	~~$0.1806~~	~~$2 709.45~~
30000	~~$0.1713~~	~~$5 137.80~~

Current price of SI2308BDS-T1-GE3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@Vigorcomp.com

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2903874

Pricing(USD)