Current price of NVD6415ANLT4G is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]
Type | Description |
---|---|
Series: | - |
Package: | Bulk |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 100 V |
Current - Continuous Drain (Id) @ 25°C: | 23A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 52mOhm @ 10A, 10V |
Vgs(th) (Max) @ Id: | 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 20 nC @ 4.5 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 1.024 pF @ 25 V |
FET Feature: | - |
Power Dissipation (Max): | 83W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | DPAK |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
23A, 100V, 0.056OHM, N-CHANNEL,
DIODE GP 800V 500MA DO219AB
MOD IPM 6-PAC 35A 600V DIP
IC PSRAM 32MBIT PARALLEL 48TFBGA