Part No :

IPI086N10N3GXKSA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 100V 80A TO262-3
Catalog
Transistors - FETs, MOSFETs - Single
DataSheet
IPI086N10N3GXKSA1 PDF
Availability
24 pieces
Unit Price
$1.59000

Current price of IPI086N10N3GXKSA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@vigor.vom.SG

Type Description
Series:OptiMOS™
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:80A (Tc)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:8.6mOhm @ 73A, 10V
Vgs(th) (Max) @ Id:3.5V @ 75µA
Gate Charge (Qg) (Max) @ Vgs:55 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:3980 pF @ 50 V
FET Feature:-
Power Dissipation (Max):125W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO262-3
Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA
  • Please confirm the specifications of the products when ordering.
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  • If you have special order instructions,please note it on the ordering pages.
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  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped. (It may take up to 24 hours before carriers display the info.)
Shipped from
HK warehouse
Expected Shipping Date
Nov 25 - Nov 29 2025
Enter Quantity
Pricing(USD)
Quantity Unit Price Ext. Price
1 $1.59000 $1.59
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