Part No :

IPB60R180C7ATMA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 650V 13A TO263-3
Catalog
Transistors - FETs, MOSFETs - Single
DataSheet
IPB60R180C7ATMA1 PDF
Availability
81 pieces
Unit Price
$3.12000

Current price of IPB60R180C7ATMA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@vigor.vom.SG

Type Description
Series:CoolMOS™ C7
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:13A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:130mOhm @ 5.3A, 10V
Vgs(th) (Max) @ Id:4V @ 260µA
Gate Charge (Qg) (Max) @ Vgs:24 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1080 pF @ 400 V
FET Feature:-
Power Dissipation (Max):68W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO263-3
Package / Case:TO-263-4, D²Pak (3 Leads + Tab), TO-263AA
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  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
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Shipped from
HK warehouse
Expected Shipping Date
Nov 25 - Nov 29 2025
Enter Quantity
Pricing(USD)
Quantity Unit Price Ext. Price
1 $3.12000 $3.12
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