SIHB12N60ET1-GE3

Part No :: SIHB12N60ET1-GE3

Manufacturer: Vishay / Siliconix

VIGOR # :: 2905654

Description: MOSFET N-CH 600V 12A TO263

Catalog: Transistors - FETs, MOSFETs - Single

DataSheet: SIHB12N60ET1-GE3 PDF

Country of origin: -

Date code: -

SIHB12N60ET1-GE3 Specifications

Type	Description
Series:	E
Package:	Bulk
Part Status:	Active
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	600 V
Current - Continuous Drain (Id) @ 25°C:	12A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	10V
Rds On (Max) @ Id, Vgs:	380mOhm @ 6A, 10V
Vgs(th) (Max) @ Id:	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	58 nC @ 10 V
Vgs (Max):	±30V
Input Capacitance (Ciss) (Max) @ Vds:	937 pF @ 100 V
FET Feature:	-
Power Dissipation (Max):	147W (Tc)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	TO-263 (D²Pak)
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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Delivery date: usually 2 to 7 working days.
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In Stock: 790

Shipped from

HK warehouse

Expected Shipping Date

Apr 21 - Apr 25 2026

Pricing(USD)

Quantity	Unit Price	Ext. Price
1	~~$2.1700~~	~~$2.17~~
10	~~$1.9678~~	~~$19.68~~
100	~~$1.5932~~	~~$159.32~~
500	~~$1.2528~~	~~$626.42~~
1000	~~$1.0487~~	~~$1 048.66~~
2500	~~$0.9806~~	~~$2 451.52~~
5000	~~$0.9466~~	~~$4 732.90~~

Current price of SIHB12N60ET1-GE3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@Vigorcomp.com

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SIHB12N60ET1-GE3

SIHB12N60ET1-GE3

2905654

Pricing(USD)