SIHD2N80AE-GE3

Part No :: SIHD2N80AE-GE3

Manufacturer: Vishay / Siliconix

VIGOR # :: 2905955

Description: MOSFET N-CH 800V 2.9A DPAK

Catalog: Transistors - FETs, MOSFETs - Single

DataSheet: SIHD2N80AE-GE3 PDF

Country of origin: -

Date code: -

SIHD2N80AE-GE3 Specifications

Type	Description
Series:	E
Package:	Tube
Part Status:	Active
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	800 V
Current - Continuous Drain (Id) @ 25°C:	2.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	10V
Rds On (Max) @ Id, Vgs:	2.9Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id:	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	10.5 nC @ 10 V
Vgs (Max):	±30V
Input Capacitance (Ciss) (Max) @ Vds:	180 pF @ 100 V
FET Feature:	-
Power Dissipation (Max):	62.5W (Tc)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	D-PAK (TO-252)
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63

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In Stock: 3047

Shipped from

HK warehouse

Expected Shipping Date

Jan 02 - Jan 06 2026

Pricing(USD)

Quantity	Unit Price	Ext. Price
1	~~$1.28~~	~~$1.28~~

Current price of SIHD2N80AE-GE3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@Vigorcomp.com

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SIHD2N80AE-GE3

SIHD2N80AE-GE3

2905955

Pricing(USD)