FQU2N100TU

Part No :: FQU2N100TU

Manufacturer: Sanyo Semiconductor/ON Semiconductor

VIGOR # :: 2906124

Description: MOSFET N-CH 1000V 1.6A IPAK

Catalog: Transistors - FETs, MOSFETs - Single

DataSheet: FQU2N100TU PDF

Country of origin: -

Date code: -

FQU2N100TU Specifications

Type	Description
Series:	QFET®
Package:	Tube
Part Status:	Active
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	1000 V
Current - Continuous Drain (Id) @ 25°C:	1.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	10V
Rds On (Max) @ Id, Vgs:	9Ohm @ 800mA, 10V
Vgs(th) (Max) @ Id:	5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	15.5 nC @ 10 V
Vgs (Max):	±30V
Input Capacitance (Ciss) (Max) @ Vds:	520 pF @ 25 V
FET Feature:	-
Power Dissipation (Max):	2.5W (Ta), 50W (Tc)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Supplier Device Package:	I-PAK
Package / Case:	TO-251-3 Short Leads, IPak, TO-251AA

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In Stock: 1147

Shipped from

HK warehouse

Expected Shipping Date

Feb 04 - Feb 08 2026

Pricing(USD)

Quantity	Unit Price	Ext. Price
1	~~$1.08~~	~~$1.08~~
10	~~$0.96~~	~~$9.59~~
100	~~$0.76~~	~~$76.36~~
500	~~$0.60~~	~~$298.86~~
1000	~~$0.48~~	~~$477.07~~

Current price of FQU2N100TU is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@Vigorcomp.com

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