SIS892ADN-T1-GE3

Part No :: SIS892ADN-T1-GE3

Manufacturer: Vishay / Siliconix

VIGOR # :: 2906951

Description: MOSFET N-CH 100V 28A PPAK1212-8

Catalog: Transistors - FETs, MOSFETs - Single

DataSheet: SIS892ADN-T1-GE3 PDF

Country of origin: -

Date code: -

SIS892ADN-T1-GE3 Specifications

Type	Description
Series:	TrenchFET®
Package:	Tape & Reel (TR)Cut Tape (CT)
Part Status:	Active
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	100 V
Current - Continuous Drain (Id) @ 25°C:	28A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Rds On (Max) @ Id, Vgs:	33mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:	3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	19.5 nC @ 10 V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	550 pF @ 50 V
FET Feature:	-
Power Dissipation (Max):	3.7W (Ta), 52W (Tc)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	PowerPAK® 1212-8
Package / Case:	PowerPAK® 1212-8

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Delivery time: At the same day (Order deadline is 2pm, HK Time).
Delivery date: usually 2 to 7 working days.
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In Stock: 15019

Shipped from

HK warehouse

Expected Shipping Date

Jan 16 - Jan 20 2026

Pricing(USD)

Quantity	Unit Price	Ext. Price
1	~~$1.13~~	~~$1.13~~
3000	~~$0.53~~	~~$1 595.82~~
6000	~~$0.51~~	~~$3 041.76~~
15000	~~$0.49~~	~~$7 336.80~~

Current price of SIS892ADN-T1-GE3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@Vigorcomp.com

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