Part No :

SCTWA50N120

Manufacturer
STMicroelectronics
VIGOR # :

2907152

Description
SICFET N-CH 1200V 65A HIP247
Catalog
Transistors - FETs, MOSFETs - Single
DataSheet
SCTWA50N120 PDF
Country of origin
-
Date code
-
ads
Type Description
Series:-
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss):1200 V
Current - Continuous Drain (Id) @ 25°C:65A (Tc)
Drive Voltage (Max Rds On, Min Rds On):20V
Rds On (Max) @ Id, Vgs:69mOhm @ 40A, 20V
Vgs(th) (Max) @ Id:3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:122 nC @ 20 V
Vgs (Max):+25V, -10V
Input Capacitance (Ciss) (Max) @ Vds:1900 pF @ 400 V
FET Feature:-
Power Dissipation (Max):318W (Tc)
Operating Temperature:-55°C ~ 200°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:HiP247™
Package / Case:TO-247-3
  • Please confirm the specifications of the products when ordering.
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  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
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Shipped from
HK warehouse
Expected Shipping Date
Apr 04 - Apr 08 2026
Pricing(USD)
Quantity Unit Price Ext. Price
1 $29.6300 $29.63
10 $27.5307 $275.31
100 $23.8972 $2 389.72

Current price of SCTWA50N120 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@Vigorcomp.com

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