SI7155DP-T1-GE3

SI7155DP-T1-GE3 Specifications

Type	Description
Series:	TrenchFET® Gen III
Package:	Tape & Reel (TR)Cut Tape (CT)
Part Status:	Active
FET Type:	P-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	40 V
Current - Continuous Drain (Id) @ 25°C:	31A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Rds On (Max) @ Id, Vgs:	3.6mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:	2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	330 nC @ 10 V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	12900 pF @ 20 V
FET Feature:	-
Power Dissipation (Max):	6.25W (Ta), 104W (Tc)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	PowerPAK® SO-8
Package / Case:	PowerPAK® SO-8

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Delivery time: At the same day (Order deadline is 2pm, HK Time).
Delivery date: usually 2 to 7 working days.
It is unable to appoint a date of delivery.
Tracking number will be sent once your order has been shipped. (It may take up to 24 hours before carriers display the info.)