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Type | Description |
---|---|
Series: | HEXFET® |
Package: | Bulk |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 12 V |
Current - Continuous Drain (Id) @ 25°C: | 84A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 2.8V, 4.5V |
Rds On (Max) @ Id, Vgs: | 8.5mOhm @ 15A, 4.5V |
Vgs(th) (Max) @ Id: | 1.9V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 41 nC @ 5 V |
Vgs (Max): | ±12V |
Input Capacitance (Ciss) (Max) @ Vds: | 2.49 pF @ 6 V |
FET Feature: | - |
Power Dissipation (Max): | 88W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | D-Pak |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
CAP CER 0.047UF 63V X7R 2220
CRYSTAL 20.0000MHZ 8PF SMD
IRLR3802 - HEXFET POWER MOSFET
ENCLOSURE NETWORK ZONE