SISS08DN-T1-GE3

Part No :: SISS08DN-T1-GE3

Manufacturer: Vishay / Siliconix

VIGOR # :: 2908178

Description: MOSFET N-CH 25V 53.9/195.5A PPAK

Catalog: Transistors - FETs, MOSFETs - Single

DataSheet: SISS08DN-T1-GE3 PDF

Country of origin: -

Date code: -

SISS08DN-T1-GE3 Specifications

Type	Description
Series:	TrenchFET® Gen IV
Package:	Tape & Reel (TR)Cut Tape (CT)
Part Status:	Active
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	25 V
Current - Continuous Drain (Id) @ 25°C:	53.9A (Ta), 195.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Rds On (Max) @ Id, Vgs:	1.23mOhm @ 15A, 10V
Vgs(th) (Max) @ Id:	2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	82 nC @ 10 V
Vgs (Max):	+20V, -16V
Input Capacitance (Ciss) (Max) @ Vds:	3670 pF @ 12.5 V
FET Feature:	-
Power Dissipation (Max):	5W (Ta), 65.7W (Tc)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	PowerPAK® 1212-8S (3.3x3.3)
Package / Case:	PowerPAK® 1212-8S

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Delivery time: At the same day (Order deadline is 2pm, HK Time).
Delivery date: usually 2 to 7 working days.
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In Stock: 3844

Shipped from

HK warehouse

Expected Shipping Date

May 28 - Jun 01 2026

Pricing(USD)

Quantity	Unit Price	Ext. Price
1	~~$1.2000~~	~~$1.20~~
3000	~~$0.5647~~	~~$1 694.19~~
6000	~~$0.5382~~	~~$3 229.32~~
15000	~~$0.5193~~	~~$7 789.20~~

Current price of SISS08DN-T1-GE3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@Vigorcomp.com

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Pricing(USD)