Part No :

SISS08DN-T1-GE3

Manufacturer
Vishay / Siliconix
Description
MOSFET N-CH 25V 53.9/195.5A PPAK
Catalog
Transistors - FETs, MOSFETs - Single
DataSheet
SISS08DN-T1-GE3 PDF
Availability
3844 pieces
Unit Price
$1.20000

Current price of SISS08DN-T1-GE3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@vigor.vom.SG

Type Description
Series:TrenchFET® Gen IV
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):25 V
Current - Continuous Drain (Id) @ 25°C:53.9A (Ta), 195.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:1.23mOhm @ 15A, 10V
Vgs(th) (Max) @ Id:2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:82 nC @ 10 V
Vgs (Max):+20V, -16V
Input Capacitance (Ciss) (Max) @ Vds:3670 pF @ 12.5 V
FET Feature:-
Power Dissipation (Max):5W (Ta), 65.7W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PowerPAK® 1212-8S (3.3x3.3)
Package / Case:PowerPAK® 1212-8S
  • Please confirm the specifications of the products when ordering.
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  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
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Shipped from
HK warehouse
Expected Shipping Date
Nov 24 - Nov 28 2025
Enter Quantity
Pricing(USD)
Quantity Unit Price Ext. Price
1 $1.20000 $1.2
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