Part No :

SCTWA90N65G2V-4

Manufacturer
STMicroelectronics
Description
TRANS SJT N-CH 650V 119A HIP247
Catalog
Transistors - FETs, MOSFETs - Single
DataSheet
SCTWA90N65G2V-4 PDF
Availability
63 pieces
Unit Price
$29.19000

Current price of SCTWA90N65G2V-4 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@vigor.vom.SG

Type Description
Series:-
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:119A (Tc)
Drive Voltage (Max Rds On, Min Rds On):-
Rds On (Max) @ Id, Vgs:24mOhm @ 50A, 18V
Vgs(th) (Max) @ Id:5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:157 nC @ 18 V
Vgs (Max):+22V, -10V
Input Capacitance (Ciss) (Max) @ Vds:3380 pF @ 400 V
FET Feature:-
Power Dissipation (Max):565W (Tc)
Operating Temperature:-55°C ~ 200°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:HiP247™ Long Leads
Package / Case:TO-247-3
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Shipped from
HK warehouse
Expected Shipping Date
Nov 24 - Nov 28 2025
Enter Quantity
Pricing(USD)
Quantity Unit Price Ext. Price
1 $29.19000 $29.19
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