SIB417EDK-T1-GE3

Part No :: SIB417EDK-T1-GE3

Manufacturer: Vishay / Siliconix

VIGOR # :: 2908607

Description: MOSFET P-CH 8V 9A PPAK SC75-6

Catalog: Transistors - FETs, MOSFETs - Single

DataSheet: SIB417EDK-T1-GE3 PDF

Country of origin: -

Date code: -

SIB417EDK-T1-GE3 Specifications

Type	Description
Series:	TrenchFET®
Package:	Tape & Reel (TR)
Part Status:	Active
FET Type:	P-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	8 V
Current - Continuous Drain (Id) @ 25°C:	9A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	1.2V, 4.5V
Rds On (Max) @ Id, Vgs:	58mOhm @ 5.8A, 4.5V
Vgs(th) (Max) @ Id:	1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	12 nC @ 5 V
Vgs (Max):	±5V
Input Capacitance (Ciss) (Max) @ Vds:	565 pF @ 4 V
FET Feature:	-
Power Dissipation (Max):	2.4W (Ta), 13W (Tc)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	PowerPAK® SC-75-6L Single
Package / Case:	PowerPAK® SC-75-6L

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In Stock: 0

Shipped from

HK warehouse

Expected Shipping Date

Dec 31 - Jan 04 2025

Pricing(USD)

Quantity	Unit Price	Ext. Price
1	~~$0.42~~	~~$0.42~~
3000	~~$0.42~~	~~$1 247.40~~

Current price of SIB417EDK-T1-GE3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@Vigorcomp.com

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