Part No :

SCT10N120

Manufacturer
STMicroelectronics
Description
SICFET N-CH 1200V 12A HIP247
Catalog
Transistors - FETs, MOSFETs - Single
DataSheet
SCT10N120 PDF
Availability
0 pieces
Unit Price
$9.29000

Current price of SCT10N120 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@vigor.vom.SG

Type Description
Series:-
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss):1200 V
Current - Continuous Drain (Id) @ 25°C:12A (Tc)
Drive Voltage (Max Rds On, Min Rds On):20V
Rds On (Max) @ Id, Vgs:690mOhm @ 6A, 20V
Vgs(th) (Max) @ Id:3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:22 nC @ 20 V
Vgs (Max):+25V, -10V
Input Capacitance (Ciss) (Max) @ Vds:290 pF @ 400 V
FET Feature:-
Power Dissipation (Max):150W (Tc)
Operating Temperature:-55°C ~ 200°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:HiP247™
Package / Case:TO-247-3
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  • Delivery date: usually 2 to 7 working days.
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Shipped from
HK warehouse
Expected Shipping Date
Nov 24 - Nov 28 2025
Enter Quantity
Pricing(USD)
Quantity Unit Price Ext. Price
1 $9.29000 $9.29
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