SIHH24N65E-T1-GE3

Part No :: SIHH24N65E-T1-GE3

Manufacturer: Vishay / Siliconix

VIGOR # :: 2908800

Description: MOSFET N-CH 650V 23A PPAK 8 X 8

Catalog: Transistors - FETs, MOSFETs - Single

DataSheet: SIHH24N65E-T1-GE3 PDF

Country of origin: -

Date code: -

SIHH24N65E-T1-GE3 Specifications

Type	Description
Series:	-
Package:	Tape & Reel (TR)Cut Tape (CT)
Part Status:	Active
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	650 V
Current - Continuous Drain (Id) @ 25°C:	23A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	10V
Rds On (Max) @ Id, Vgs:	150mOhm @ 12A, 10V
Vgs(th) (Max) @ Id:	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	116 nC @ 10 V
Vgs (Max):	±30V
Input Capacitance (Ciss) (Max) @ Vds:	2814 pF @ 100 V
FET Feature:	-
Power Dissipation (Max):	202W (Tc)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	PowerPAK® 8 x 8
Package / Case:	8-PowerTDFN

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Delivery date: usually 2 to 7 working days.
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In Stock: 3977

Shipped from

HK warehouse

Expected Shipping Date

Jan 27 - Jan 31 2026

Pricing(USD)

Quantity	Unit Price	Ext. Price
1	~~$7.13~~	~~$7.13~~
3000	~~$4.04~~	~~$12 119.31~~

Current price of SIHH24N65E-T1-GE3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@Vigorcomp.com

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Pricing(USD)