Part No :

IMBG120R350M1HXTMA1

Manufacturer
IR (Infineon Technologies)
Description
TRANS SJT N-CH 1.2KV 4.7A TO263
Catalog
Transistors - FETs, MOSFETs - Single
DataSheet
IMBG120R350M1HXTMA1 PDF
Availability
918 pieces
Unit Price
$8.22000

Current price of IMBG120R350M1HXTMA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@vigor.vom.SG

Type Description
Series:CoolSiC™
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss):1.2 kV
Current - Continuous Drain (Id) @ 25°C:4.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On):-
Rds On (Max) @ Id, Vgs:468mOhm @ 2A, 18V
Vgs(th) (Max) @ Id:5.7V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:5.9 nC @ 18 V
Vgs (Max):+18V, -15V
Input Capacitance (Ciss) (Max) @ Vds:196 pF @ 800 V
FET Feature:Standard
Power Dissipation (Max):65W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO263-7-12
Package / Case:TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
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  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
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Shipped from
HK warehouse
Expected Shipping Date
Nov 24 - Nov 28 2025
Enter Quantity
Pricing(USD)
Quantity Unit Price Ext. Price
1 $8.22000 $8.22
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