SISS60DN-T1-GE3

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Part No :

SISS60DN-T1-GE3

Manufacturer
Vishay / Siliconix
Description
MOSFET N-CH 30V 50.1/181.8A PPAK
Catalog
Transistors - FETs, MOSFETs - Single
DataSheet
SISS60DN-T1-GE3 PDF
Availability
5778 pieces
Unit Price
$1.58000

Current price of SISS60DN-T1-GE3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@vigor.vom.SG

Type Description
Series:TrenchFET® Gen IV
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:50.1A (Ta), 181.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:1.31mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:85.5 nC @ 10 V
Vgs (Max):+16V, -12V
Input Capacitance (Ciss) (Max) @ Vds:3960 pF @ 15 V
FET Feature:Schottky Diode (Body)
Power Dissipation (Max):5.1W (Ta), 65.8W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PowerPAK® 1212-8S
Package / Case:PowerPAK® 1212-8S
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  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
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Shipped from
HK warehouse
Expected Shipping Date
Nov 14 - Nov 18 2025
Enter Quantity
Pricing(USD)
Quantity Unit Price Ext. Price
1 $1.58000 $1.58
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