RM4N650IP

Part No :: RM4N650IP

Manufacturer: Rectron USA

VIGOR # :: 2909144

Description: MOSFET N-CHANNEL 650V 4A TO251

Catalog: Transistors - FETs, MOSFETs - Single

DataSheet: RM4N650IP PDF

Country of origin: -

Date code: -

RM4N650IP Specifications

Type	Description
Series:	-
Package:	Tube
Part Status:	Active
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	650 V
Current - Continuous Drain (Id) @ 25°C:	4A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	10V
Rds On (Max) @ Id, Vgs:	1.2Ohm @ 2.5A, 10V
Vgs(th) (Max) @ Id:	3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	-
Vgs (Max):	±30V
Input Capacitance (Ciss) (Max) @ Vds:	280 pF @ 50 V
FET Feature:	-
Power Dissipation (Max):	46W (Tc)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Supplier Device Package:	TO-251
Package / Case:	TO-251-3 Stub Leads, IPak

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In Stock: 0

Shipped from

HK warehouse

Expected Shipping Date

Jan 03 - Jan 07 2026

Pricing(USD)

Quantity	Unit Price	Ext. Price
1	~~$0.33~~	~~$0.33~~

Current price of RM4N650IP is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@Vigorcomp.com

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Pricing(USD)