BSZ0909NSATMA1

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Part No :: BSZ0909NSATMA1

Manufacturer: IR (Infineon Technologies)

Description: MOSFET N-CH 34V 9A/36A 8TSDSON

Catalog: Transistors - FETs, MOSFETs - Single

Shipped from: HK warehouse

Expected Shipping Date: Oct 05 - Oct 09 2025

DataSheet: BSZ0909NSATMA1 PDF

Availability: 8675 pieces

Unit Price: ~~$0.65000~~

Current price of BSZ0909NSATMA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

BSZ0909NSATMA1 Specifications

Type	Description
Series:	OptiMOS™
Package:	Tape & Reel (TR)Cut Tape (CT)
Part Status:	Active
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	34 V
Current - Continuous Drain (Id) @ 25°C:	9A (Ta), 36A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Rds On (Max) @ Id, Vgs:	12mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:	2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	17 nC @ 10 V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	1310 pF @ 15 V
FET Feature:	-
Power Dissipation (Max):	2.1W (Ta), 25W (Tc)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	PG-TSDSON-8
Package / Case:	8-PowerTDFN

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