FQD2N60CTM-WS

Part No :: FQD2N60CTM-WS

Manufacturer: Sanyo Semiconductor/ON Semiconductor

VIGOR # :: 2910134

Description: MOSFET N-CH 600V 1.9A DPAK

Catalog: Transistors - FETs, MOSFETs - Single

DataSheet: FQD2N60CTM-WS PDF

Country of origin: -

Date code: -

FQD2N60CTM-WS Specifications

Type	Description
Series:	QFET®
Package:	Tape & Reel (TR)Cut Tape (CT)
Part Status:	Active
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	600 V
Current - Continuous Drain (Id) @ 25°C:	1.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	10V
Rds On (Max) @ Id, Vgs:	4.7Ohm @ 950mA, 10V
Vgs(th) (Max) @ Id:	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	12 nC @ 10 V
Vgs (Max):	±30V
Input Capacitance (Ciss) (Max) @ Vds:	235 pF @ 25 V
FET Feature:	-
Power Dissipation (Max):	2.5W (Ta), 44W (Tc)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	D-Pak
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63

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In Stock: 0

Shipped from

HK warehouse

Expected Shipping Date

Jun 01 - Jun 05 2026

Pricing(USD)

Quantity	Unit Price	Ext. Price
1	~~$0.3286~~	~~$0.33~~
2500	~~$0.3286~~	~~$821.62~~

Current price of FQD2N60CTM-WS is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@Vigorcomp.com

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2910134

Pricing(USD)