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Type | Description |
---|---|
Series: | HEXFET® |
Package: | Bulk |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 30 V |
Current - Continuous Drain (Id) @ 25°C: | 140A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 5.5mOhm @ 71A, 10V |
Vgs(th) (Max) @ Id: | 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 76 nC @ 4.5 V |
Vgs (Max): | ±16V |
Input Capacitance (Ciss) (Max) @ Vds: | 3.72 pF @ 25 V |
FET Feature: | - |
Power Dissipation (Max): | 200W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-220AB |
Package / Case: | TO-220-3 |
IRL3803 - 12V-300V N-CHANNEL POW
CONN, RJ45, CAT6A, DIECAST HOUSI
B302-7X10-WK-O-DAN-BOILER ROOM A
DIODE ZENER 12V 400MW DO35