IRFHM3911TRPBF

IRFHM3911TRPBF Specifications

Type	Description
Series:	HEXFET®
Package:	Tape & Reel (TR)Cut Tape (CT)
Part Status:	Active
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	100 V
Current - Continuous Drain (Id) @ 25°C:	3.2A (Ta), 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	10V
Rds On (Max) @ Id, Vgs:	115mOhm @ 6.3A, 10V
Vgs(th) (Max) @ Id:	4V @ 35µA
Gate Charge (Qg) (Max) @ Vgs:	26 nC @ 10 V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	760 pF @ 50 V
FET Feature:	-
Power Dissipation (Max):	2.8W (Ta), 29W (Tc)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	8-PQFN (3x3)
Package / Case:	8-PowerTDFN

TT in advance (bank transfer), Credit Card, PayPal can be chosen.
Cash transfer only. (Transfer with checks and bills are not accepted.)
Customer is responsible for paying all possible charges,including sales tax, VAT and customs charges,etc.
If you need the detailed invoice or tax ID,please email us.

FedEx, DHL, and UPS can be selected.
You can select whether to charge shipping fee by your shipping account or to charge by our side.
Please confirm with the logistics company in advance if you are in a remote area. (It may cost extra fees (35-50 USD) for delivery at those areas.)
The shopping cart will automatically calculate the shipping cost.
Delivery time: At the same day (Order deadline is 2pm, HK Time).
Delivery date: usually 2 to 7 working days.
It is unable to appoint a date of delivery.
Tracking number will be sent once your order has been shipped. (It may take up to 24 hours before carriers display the info.)