SISS61DN-T1-GE3

Part No :: SISS61DN-T1-GE3

Manufacturer: Vishay / Siliconix

VIGOR # :: 2910660

Description: MOSFET P-CH 20V 30.9/111.9A PPAK

Catalog: Transistors - FETs, MOSFETs - Single

DataSheet: SISS61DN-T1-GE3 PDF

Country of origin: -

Date code: -

SISS61DN-T1-GE3 Specifications

Type	Description
Series:	TrenchFET® Gen III
Package:	Tape & Reel (TR)Cut Tape (CT)
Part Status:	Active
FET Type:	P-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	20 V
Current - Continuous Drain (Id) @ 25°C:	30.9A (Ta), 111.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	1.8V, 4.5V
Rds On (Max) @ Id, Vgs:	3.5mOhm @ 15A, 4.5V
Vgs(th) (Max) @ Id:	900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	231 nC @ 10 V
Vgs (Max):	±8V
Input Capacitance (Ciss) (Max) @ Vds:	8740 pF @ 10 V
FET Feature:	-
Power Dissipation (Max):	5W (Ta), 65.8W (Tc)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	PowerPAK® 1212-8S
Package / Case:	PowerPAK® 1212-8S

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In Stock: 0

Shipped from

HK warehouse

Expected Shipping Date

Dec 29 - Jan 02 2025

Pricing(USD)

Quantity	Unit Price	Ext. Price
1	~~$1.04~~	~~$1.04~~

Current price of SISS61DN-T1-GE3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@Vigorcomp.com

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SISS61DN-T1-GE3

SISS61DN-T1-GE3

2910660

Pricing(USD)