SIHB24N65ET1-GE3

Part No :: SIHB24N65ET1-GE3

Manufacturer: Vishay / Siliconix

VIGOR # :: 2911150

Description: MOSFET N-CH 650V 24A TO263

Catalog: Transistors - FETs, MOSFETs - Single

DataSheet: SIHB24N65ET1-GE3 PDF

Country of origin: -

Date code: -

SIHB24N65ET1-GE3 Specifications

Type	Description
Series:	E
Package:	Tape & Reel (TR)
Part Status:	Active
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	650 V
Current - Continuous Drain (Id) @ 25°C:	24A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	10V
Rds On (Max) @ Id, Vgs:	145mOhm @ 12A, 10V
Vgs(th) (Max) @ Id:	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	122 nC @ 10 V
Vgs (Max):	±30V
Input Capacitance (Ciss) (Max) @ Vds:	2740 pF @ 100 V
FET Feature:	-
Power Dissipation (Max):	250W (Tc)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	TO-263 (D²Pak)
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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In Stock: 0

Shipped from

HK warehouse

Expected Shipping Date

Jan 30 - Feb 03 2026

Pricing(USD)

Quantity	Unit Price	Ext. Price
1	~~$3.89~~	~~$3.89~~
800	~~$3.87~~	~~$3 093.82~~

Current price of SIHB24N65ET1-GE3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@Vigorcomp.com

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SIHB24N65ET1-GE3

SIHB24N65ET1-GE3

2911150

Pricing(USD)