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SIDR610DP-T1-GE3

SIDR610DP-T1-GE3

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Part No :

SIDR610DP-T1-GE3

Manufacturer
Vishay / Siliconix
Description
MOSFET N-CH 200V 8.9A/39.6A PPAK
Catalog
Transistors - FETs, MOSFETs - Single
Shipped from
HK warehouse
Expected Shipping Date
Oct 12 - Oct 16 2025
DataSheet
SIDR610DP-T1-GE3 PDF
Availability
1124 pieces
Unit Price
$3.58000

Current price of SIDR610DP-T1-GE3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

SIDR610DP-T1-GE3 Specifications
Type Description
Series:TrenchFET®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):200 V
Current - Continuous Drain (Id) @ 25°C:8.9A (Ta), 39.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On):7.5V, 10V
Rds On (Max) @ Id, Vgs:31.9mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:38 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1380 pF @ 100 V
FET Feature:-
Power Dissipation (Max):6.25W (Ta), 125W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PowerPAK® SO-8DC
Package / Case:PowerPAK® SO-8
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  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
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