TPN4R712MD,L1Q

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Part No :: TPN4R712MD,L1Q

Manufacturer: Toshiba Electronic Devices and Storage Corporation

Description: MOSFET P-CH 20V 36A 8TSON

Catalog: Transistors - FETs, MOSFETs - Single

Shipped from: HK warehouse

Expected Shipping Date: Oct 03 - Oct 07 2025

DataSheet: TPN4R712MD,L1Q PDF

Availability: 6602 pieces

Unit Price: ~~$0.80000~~

Current price of TPN4R712MD,L1Q is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

TPN4R712MD,L1Q Specifications

Type	Description
Series:	U-MOSVI
Package:	Tape & Reel (TR)Cut Tape (CT)
Part Status:	Active
FET Type:	P-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	20 V
Current - Continuous Drain (Id) @ 25°C:	36A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	2.5V, 4.5V
Rds On (Max) @ Id, Vgs:	4.7mOhm @ 18A, 4.5V
Vgs(th) (Max) @ Id:	1.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:	65 nC @ 5 V
Vgs (Max):	±12V
Input Capacitance (Ciss) (Max) @ Vds:	4300 pF @ 10 V
FET Feature:	-
Power Dissipation (Max):	42W (Tc)
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	8-TSON Advance (3.3x3.3)
Package / Case:	8-PowerVDFN

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