SIRA20BDP-T1-GE3

Part No :: SIRA20BDP-T1-GE3

Manufacturer: Vishay / Siliconix

VIGOR # :: 2911365

Description: MOSFET N-CH 25V 82A/335A PPAK

Catalog: Transistors - FETs, MOSFETs - Single

DataSheet: SIRA20BDP-T1-GE3 PDF

Country of origin: -

Date code: -

SIRA20BDP-T1-GE3 Specifications

Type	Description
Series:	TrenchFET® Gen IV
Package:	Tape & Reel (TR)Cut Tape (CT)
Part Status:	Active
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	25 V
Current - Continuous Drain (Id) @ 25°C:	82A (Ta), 335A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	-
Rds On (Max) @ Id, Vgs:	0.58mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:	2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	186 nC @ 10 V
Vgs (Max):	+16V, -12V
Input Capacitance (Ciss) (Max) @ Vds:	9950 pF @ 15 V
FET Feature:	-
Power Dissipation (Max):	6.3W (Ta), 104W (Tc)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	PowerPAK® SO-8
Package / Case:	PowerPAK® SO-8

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In Stock: 0

Shipped from

HK warehouse

Expected Shipping Date

Dec 29 - Jan 02 2025

Pricing(USD)

Quantity	Unit Price	Ext. Price
1	~~$1.72~~	~~$1.72~~

Current price of SIRA20BDP-T1-GE3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@Vigorcomp.com

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SIRA20BDP-T1-GE3

SIRA20BDP-T1-GE3

2911365

Pricing(USD)