SISH112DN-T1-GE3

Part No :: SISH112DN-T1-GE3

Manufacturer: Vishay / Siliconix

VIGOR # :: 2911460

Description: MOSFET N-CH 30V 11.3A PPAK

Catalog: Transistors - FETs, MOSFETs - Single

DataSheet: SISH112DN-T1-GE3 PDF

Country of origin: -

Date code: -

SISH112DN-T1-GE3 Specifications

Type	Description
Series:	TrenchFET®
Package:	Tape & Reel (TR)Cut Tape (CT)
Part Status:	Active
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	30 V
Current - Continuous Drain (Id) @ 25°C:	11.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Rds On (Max) @ Id, Vgs:	7.5mOhm @ 17.8A, 10V
Vgs(th) (Max) @ Id:	1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	27 nC @ 4.5 V
Vgs (Max):	±12V
Input Capacitance (Ciss) (Max) @ Vds:	2610 pF @ 15 V
FET Feature:	-
Power Dissipation (Max):	1.5W (Tc)
Operating Temperature:	-50°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	PowerPAK® 1212-8SH
Package / Case:	PowerPAK® 1212-8SH

Please confirm the specifications of the products when ordering.
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Delivery time: At the same day (Order deadline is 2pm, HK Time).
Delivery date: usually 2 to 7 working days.
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In Stock: 4050

Shipped from

HK warehouse

Expected Shipping Date

Jan 01 - Jan 05 2025

Pricing(USD)

Quantity	Unit Price	Ext. Price
1	~~$1.56~~	~~$1.56~~
3000	~~$0.73~~	~~$2 200.23~~
6000	~~$0.70~~	~~$4 193.82~~
15000	~~$0.67~~	~~$10 115.70~~

Current price of SISH112DN-T1-GE3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@Vigorcomp.com

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SISH112DN-T1-GE3

SISH112DN-T1-GE3

2911460

Pricing(USD)