SISH112DN-T1-GE3

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Part No :: SISH112DN-T1-GE3

Manufacturer: Vishay / Siliconix

Description: MOSFET N-CH 30V 11.3A PPAK

Catalog: Transistors - FETs, MOSFETs - Single

DataSheet: SISH112DN-T1-GE3 PDF

Availability: 4050 pieces

Unit Price: ~~$1.56000~~

Current price of SISH112DN-T1-GE3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@vigor.vom.SG

SISH112DN-T1-GE3 Specifications

Type	Description
Series:	TrenchFET®
Package:	Tape & Reel (TR)Cut Tape (CT)
Part Status:	Active
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	30 V
Current - Continuous Drain (Id) @ 25°C:	11.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Rds On (Max) @ Id, Vgs:	7.5mOhm @ 17.8A, 10V
Vgs(th) (Max) @ Id:	1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	27 nC @ 4.5 V
Vgs (Max):	±12V
Input Capacitance (Ciss) (Max) @ Vds:	2610 pF @ 15 V
FET Feature:	-
Power Dissipation (Max):	1.5W (Tc)
Operating Temperature:	-50°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	PowerPAK® 1212-8SH
Package / Case:	PowerPAK® 1212-8SH

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