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SIHB23N60E-GE3

SIHB23N60E-GE3

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Part No :

SIHB23N60E-GE3

Manufacturer
Vishay / Siliconix
Description
MOSFET N-CH 600V 23A D2PAK
Catalog
Transistors - FETs, MOSFETs - Single
Shipped from
HK warehouse
Expected Shipping Date
Oct 01 - Oct 05 2025
DataSheet
SIHB23N60E-GE3 PDF
Availability
1030 pieces
Unit Price
$4.11000

Current price of SIHB23N60E-GE3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

SIHB23N60E-GE3 Specifications
Type Description
Series:-
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:23A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:158mOhm @ 12A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:95 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:2418 pF @ 100 V
FET Feature:-
Power Dissipation (Max):227W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D²PAK (TO-263)
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
  • Please confirm the specifications of the products when ordering.
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  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
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