Part No :

SISS32ADN-T1-GE3

Manufacturer
Vishay / Siliconix
VIGOR # :

2911526

Description
MOSFET N-CH 80V 17.4A/63A PPAK
Catalog
Transistors - FETs, MOSFETs - Single
DataSheet
SISS32ADN-T1-GE3 PDF
Country of origin
-
Date code
-
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Type Description
Series:TrenchFET® Gen IV
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):80 V
Current - Continuous Drain (Id) @ 25°C:17.4A (Ta), 63A (Tc)
Drive Voltage (Max Rds On, Min Rds On):7.5V, 10V
Rds On (Max) @ Id, Vgs:7.3mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:3.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:36 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1520 pF @ 40 V
FET Feature:-
Power Dissipation (Max):5W (Ta), 65.7W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PowerPAK® 1212-8S
Package / Case:PowerPAK® 1212-8S
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  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
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Shipped from
HK warehouse
Expected Shipping Date
Jan 26 - Jan 30 2026
Pricing(USD)
Quantity Unit Price Ext. Price
1 $1.63 $1.63

Current price of SISS32ADN-T1-GE3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@Vigorcomp.com

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