RV8C010UNHZGG2CR

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Part No :: RV8C010UNHZGG2CR

Manufacturer: ROHM Semiconductor

Description: MOSFET N-CH 20V 1A DFN1010-3W

Catalog: Transistors - FETs, MOSFETs - Single

Shipped from: HK warehouse

Expected Shipping Date: Oct 05 - Oct 09 2025

DataSheet: RV8C010UNHZGG2CR PDF

Availability: 0 pieces

Unit Price: ~~$0.55000~~

Current price of RV8C010UNHZGG2CR is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

RV8C010UNHZGG2CR Specifications

Type	Description
Series:	Automotive, AEC-Q101
Package:	Tape & Reel (TR)Cut Tape (CT)
Part Status:	Active
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	20 V
Current - Continuous Drain (Id) @ 25°C:	1A (Ta)
Drive Voltage (Max Rds On, Min Rds On):	-
Rds On (Max) @ Id, Vgs:	470mOhm @ 500mA, 4.5V
Vgs(th) (Max) @ Id:	1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:	-
Vgs (Max):	±8V
Input Capacitance (Ciss) (Max) @ Vds:	40 pF @ 10 V
FET Feature:	-
Power Dissipation (Max):	1W
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	DFN1010-3W
Package / Case:	3-XFDFN

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