SISH108DN-T1-GE3

Part No :: SISH108DN-T1-GE3

Manufacturer: Vishay / Siliconix

VIGOR # :: 2911707

Description: MOSFET N-CH 20V 14A PPAK1212-8SH

Catalog: Transistors - FETs, MOSFETs - Single

DataSheet: SISH108DN-T1-GE3 PDF

Country of origin: -

Date code: -

SISH108DN-T1-GE3 Specifications

Type	Description
Series:	TrenchFET® Gen II
Package:	Tape & Reel (TR)Cut Tape (CT)
Part Status:	Active
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	20 V
Current - Continuous Drain (Id) @ 25°C:	14A (Ta)
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Rds On (Max) @ Id, Vgs:	4.9mOhm @ 22A, 10V
Vgs(th) (Max) @ Id:	2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	30 nC @ 4.5 V
Vgs (Max):	±16V
Input Capacitance (Ciss) (Max) @ Vds:	-
FET Feature:	-
Power Dissipation (Max):	1.5W (Ta)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	PowerPAK® 1212-8SH
Package / Case:	PowerPAK® 1212-8SH

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Delivery date: usually 2 to 7 working days.
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In Stock: 6000

Shipped from

HK warehouse

Expected Shipping Date

Jan 22 - Jan 26 2026

Pricing(USD)

Quantity	Unit Price	Ext. Price
1	~~$0.74~~	~~$0.74~~
3000	~~$0.29~~	~~$857.70~~
6000	~~$0.27~~	~~$1 610.76~~
15000	~~$0.25~~	~~$3 765.75~~
30000	~~$0.24~~	~~$7 165.50~~

Current price of SISH108DN-T1-GE3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@Vigorcomp.com

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SISH108DN-T1-GE3

SISH108DN-T1-GE3

2911707

Pricing(USD)