IPAN65R650CEXKSA1

Part No :: IPAN65R650CEXKSA1

Manufacturer: IR (Infineon Technologies)

VIGOR # :: 2911812

Description: MOSFET N-CH 650V 10.1A TO220

Catalog: Transistors - FETs, MOSFETs - Single

DataSheet: IPAN65R650CEXKSA1 PDF

Country of origin: -

Date code: -

IPAN65R650CEXKSA1 Specifications

Type	Description
Series:	CoolMOS™
Package:	Tube
Part Status:	Active
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	650 V
Current - Continuous Drain (Id) @ 25°C:	10.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	10V
Rds On (Max) @ Id, Vgs:	650mOhm @ 2.1A, 10V
Vgs(th) (Max) @ Id:	3.5V @ 210µA
Gate Charge (Qg) (Max) @ Vgs:	23 nC @ 10 V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	440 pF @ 100 V
FET Feature:	Super Junction
Power Dissipation (Max):	28W (Tc)
Operating Temperature:	-40°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Supplier Device Package:	PG-TO220 Full Pack
Package / Case:	TO-220-3 Full Pack

Please confirm the specifications of the products when ordering.
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In Stock: 0

Shipped from

HK warehouse

Expected Shipping Date

Dec 29 - Jan 02 2025

Pricing(USD)

Quantity	Unit Price	Ext. Price
1	~~$0.68~~	~~$0.68~~
10	~~$0.61~~	~~$6.06~~
100	~~$0.49~~	~~$48.59~~
500	~~$0.38~~	~~$191.99~~
1000	~~$0.31~~	~~$309.88~~

Current price of IPAN65R650CEXKSA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@Vigorcomp.com

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