Part No :

RM12N650T2

Manufacturer
Rectron USA
VIGOR # :

2912123

Description
MOSFET N-CH 650V 11.5A TO220-3
Catalog
Transistors - FETs, MOSFETs - Single
DataSheet
RM12N650T2 PDF
Country of origin
-
Date code
-
ads
Type Description
Series:-
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:11.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:360mOhm @ 7A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:-
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:870 pF @ 50 V
FET Feature:-
Power Dissipation (Max):101W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220-3
Package / Case:TO-220-3
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  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
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Shipped from
HK warehouse
Expected Shipping Date
Dec 28 - Jan 01 2025
Pricing(USD)
Quantity Unit Price Ext. Price
1 $0.67 $0.67

Current price of RM12N650T2 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@Vigorcomp.com

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