GA10SICP12-263

Part No :: GA10SICP12-263

Manufacturer: GeneSiC Semiconductor

VIGOR # :: 2912436

Description: TRANS SJT 1200V 25A D2PAK

Catalog: Transistors - FETs, MOSFETs - Single

DataSheet: GA10SICP12-263 PDF

Country of origin: -

Date code: -

GA10SICP12-263 Specifications

Type	Description
Series:	-
Package:	Tube
Part Status:	Active
FET Type:	-
Technology:	SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss):	1200 V
Current - Continuous Drain (Id) @ 25°C:	25A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	-
Rds On (Max) @ Id, Vgs:	100mOhm @ 10A
Vgs(th) (Max) @ Id:	-
Gate Charge (Qg) (Max) @ Vgs:	-
Vgs (Max):	-
Input Capacitance (Ciss) (Max) @ Vds:	1403 pF @ 800 V
FET Feature:	-
Power Dissipation (Max):	170W (Tc)
Operating Temperature:	175°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	D2PAK (7-Lead)
Package / Case:	TO-263-8, D²Pak (7 Leads + Tab), TO-263CA

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In Stock: 0

Shipped from

HK warehouse

Expected Shipping Date

Apr 08 - Apr 12 2026

Pricing(USD)

Quantity	Unit Price	Ext. Price
1	~~$29.6769~~	~~$29.68~~
500	~~$29.6769~~	~~$14 838.45~~

Current price of GA10SICP12-263 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@Vigorcomp.com

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GA10SICP12-263

GA10SICP12-263

2912436

Pricing(USD)