Part No :

IPD082N10N3GATMA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 100V 80A TO252-3
Catalog
Transistors - FETs, MOSFETs - Single
DataSheet
IPD082N10N3GATMA1 PDF
Availability
0 pieces
Unit Price
$1.95000

Current price of IPD082N10N3GATMA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@vigor.vom.SG

Type Description
Series:OptiMOS™
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:80A (Tc)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:8.2mOhm @ 73A, 10V
Vgs(th) (Max) @ Id:3.5V @ 75µA
Gate Charge (Qg) (Max) @ Vgs:55 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:3980 pF @ 50 V
FET Feature:-
Power Dissipation (Max):125W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO252-3
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
  • Please confirm the specifications of the products when ordering.
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  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
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Shipped from
HK warehouse
Expected Shipping Date
Nov 20 - Nov 24 2025
Enter Quantity
Pricing(USD)
Quantity Unit Price Ext. Price
1 $1.95000 $1.95
2500 $0.85383 $2134.575
5000 $0.82221 $4111.05
12500 $0.80496 $10062
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