SI7615BDN-T1-GE3

Part No :: SI7615BDN-T1-GE3

Manufacturer: Vishay / Siliconix

VIGOR # :: 2913291

Description: MOSFET P-CH 20V 29A/104A PPAK

Catalog: Transistors - FETs, MOSFETs - Single

DataSheet: SI7615BDN-T1-GE3 PDF

Country of origin: -

Date code: -

SI7615BDN-T1-GE3 Specifications

Type	Description
Series:	-
Package:	Tape & Reel (TR)Cut Tape (CT)
Part Status:	Active
FET Type:	P-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	20 V
Current - Continuous Drain (Id) @ 25°C:	29A (Ta), 104A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	-
Rds On (Max) @ Id, Vgs:	3.8mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:	1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	155 nC @ 10 V
Vgs (Max):	±12V
Input Capacitance (Ciss) (Max) @ Vds:	4890 pF @ 10 V
FET Feature:	-
Power Dissipation (Max):	5.2W (Ta), 66W (Tc)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	PowerPAK® 1212-8
Package / Case:	PowerPAK® 1212-8

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In Stock: 40

Shipped from

HK warehouse

Expected Shipping Date

Jan 27 - Jan 31 2026

Pricing(USD)

Quantity	Unit Price	Ext. Price
1	~~$0.77~~	~~$0.77~~

Current price of SI7615BDN-T1-GE3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@Vigorcomp.com

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SI7615BDN-T1-GE3

SI7615BDN-T1-GE3

2913291

Pricing(USD)