SI8800EDB-T2-E1

Part No :: SI8800EDB-T2-E1

Manufacturer: Vishay / Siliconix

VIGOR # :: 2913673

Description: MOSFET N-CH 20V 4MICROFOOT

Catalog: Transistors - FETs, MOSFETs - Single

DataSheet: SI8800EDB-T2-E1 PDF

Country of origin: -

Date code: -

SI8800EDB-T2-E1 Specifications

Type	Description
Series:	TrenchFET®
Package:	Tape & Reel (TR)Cut Tape (CT)
Part Status:	Active
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	20 V
Current - Continuous Drain (Id) @ 25°C:	2A (Ta)
Drive Voltage (Max Rds On, Min Rds On):	1.5V, 4.5V
Rds On (Max) @ Id, Vgs:	80mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id:	1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	8.3 nC @ 8 V
Vgs (Max):	±8V
Input Capacitance (Ciss) (Max) @ Vds:	-
FET Feature:	-
Power Dissipation (Max):	500mW (Ta)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	4-Microfoot
Package / Case:	4-XFBGA, CSPBGA

Please confirm the specifications of the products when ordering.
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Delivery time: At the same day (Order deadline is 2pm, HK Time).
Delivery date: usually 2 to 7 working days.
It is unable to appoint a date of delivery.
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In Stock: 115684

Shipped from

HK warehouse

Expected Shipping Date

Dec 28 - Jan 01 2025

Pricing(USD)

Quantity	Unit Price	Ext. Price
1	~~$0.49~~	~~$0.49~~
3000	~~$0.18~~	~~$540.21~~
6000	~~$0.17~~	~~$1 010.70~~
15000	~~$0.16~~	~~$2 352.45~~
30000	~~$0.15~~	~~$4 461.00~~

Current price of SI8800EDB-T2-E1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@Vigorcomp.com

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