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IRF6665TR1PBF

IRF6665TR1PBF

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Part No :

IRF6665TR1PBF

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 100V 4.2A DIRECTFET
Catalog
Transistors - FETs, MOSFETs - Single
Shipped from
HK warehouse
Expected Shipping Date
Oct 07 - Oct 11 2025
DataSheet
IRF6665TR1PBF PDF
Availability
0 pieces
Unit Price
$0.00000

Current price of IRF6665TR1PBF is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

IRF6665TR1PBF Specifications
Type Description
Series:HEXFET®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:4.2A (Ta), 19A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:62mOhm @ 5A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:13 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:530 pF @ 25 V
FET Feature:-
Power Dissipation (Max):2.2W (Ta), 42W (Tc)
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DIRECTFET™ SH
Package / Case:DirectFET™ Isometric SH
  • Please confirm the specifications of the products when ordering.
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  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
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