IPI12CNE8N G

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Part No :: IPI12CNE8N G

Manufacturer: IR (Infineon Technologies)

Description: MOSFET N-CH 85V 67A TO262-3

Catalog: Transistors - FETs, MOSFETs - Single

Shipped from: HK warehouse

Expected Shipping Date: Nov 12 - Nov 16 2025

DataSheet: IPI12CNE8N G PDF

Availability: 0 pieces

Unit Price: ~~$0.00000~~

Current price of IPI12CNE8N G is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@vigor.vom.SG

IPI12CNE8N G Specifications

Type	Description
Series:	OptiMOS™
Package:	Tube
Part Status:	Obsolete
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	85 V
Current - Continuous Drain (Id) @ 25°C:	67A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	10V
Rds On (Max) @ Id, Vgs:	12.6mOhm @ 67A, 10V
Vgs(th) (Max) @ Id:	4V @ 83µA
Gate Charge (Qg) (Max) @ Vgs:	64 nC @ 10 V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	4340 pF @ 40 V
FET Feature:	-
Power Dissipation (Max):	125W (Tc)
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Through Hole
Supplier Device Package:	PG-TO262-3
Package / Case:	TO-262-3 Long Leads, I²Pak, TO-262AA

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