Part No :

SIA850DJ-T1-GE3

Manufacturer
Vishay / Siliconix
VIGOR # :

4579575

Description
MOSFET N-CH 190V 950MA PPAK
Catalog
Transistors - FETs, MOSFETs - Single
DataSheet
SIA850DJ-T1-GE3 PDF
Country of origin
-
Date code
-
ads
Type Description
Series:LITTLE FOOT®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):190 V
Current - Continuous Drain (Id) @ 25°C:950mA (Tc)
Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
Rds On (Max) @ Id, Vgs:3.8Ohm @ 360mA, 4.5V
Vgs(th) (Max) @ Id:1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:4.5 nC @ 10 V
Vgs (Max):±16V
Input Capacitance (Ciss) (Max) @ Vds:90 pF @ 100 V
FET Feature:Schottky Diode (Isolated)
Power Dissipation (Max):1.9W (Ta), 7W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PowerPAK® SC-70-6 Dual
Package / Case:PowerPAK® SC-70-6 Dual
  • Please confirm the specifications of the products when ordering.
  • MOQ means the minimum order quantity required to purchase each parts.
  • If you have special order instructions,please note it on the ordering pages.
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  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped. (It may take up to 24 hours before carriers display the info.)
Shipped from
HK warehouse
Expected Shipping Date
Sep 16 - Sep 20 2026
Pricing(USD)
Quantity Unit Price Ext. Price

Current price of SIA850DJ-T1-GE3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@Vigorcomp.com

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