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| Type | Description | 
|---|---|
| Series: | - | 
| Package: | Bulk | 
| Part Status: | Obsolete | 
| FET Type: | N-Channel | 
| Technology: | SiCFET (Silicon Carbide) | 
| Drain to Source Voltage (Vdss): | 1700 V | 
| Current - Continuous Drain (Id) @ 25°C: | 4.6A (Tc) | 
| Drive Voltage (Max Rds On, Min Rds On): | 20V | 
| Rds On (Max) @ Id, Vgs: | 1.2Ohm @ 2A, 20V | 
| Vgs(th) (Max) @ Id: | 3.2V @ 500µA | 
| Gate Charge (Qg) (Max) @ Vgs: | 29 nC @ 20 V | 
| Vgs (Max): | +25V, -10V | 
| Input Capacitance (Ciss) (Max) @ Vds: | 325 pF @ 1000 V | 
| FET Feature: | - | 
| Power Dissipation (Max): | 52W (Tc) | 
| Operating Temperature: | -55°C ~ 175°C (TJ) | 
| Mounting Type: | Surface Mount | 
| Supplier Device Package: | D3Pak | 
| Package / Case: | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA | 
SICFET N-CH 1700V 4.6A D3PAK
MOSFET N CH 650V 4A TO220-3
CONN EDGE DUAL FMALE 62POS 0.100