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NTLJD3182FZTBG

NTLJD3182FZTBG

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Part No :

NTLJD3182FZTBG

Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
MOSFET P-CH 20V 2.2A 6WDFN
Catalog
Transistors - FETs, MOSFETs - Single
Shipped from
HK warehouse
Expected Shipping Date
Nov 06 - Nov 10 2025
DataSheet
NTLJD3182FZTBG PDF
Availability
0 pieces
Unit Price
$0.00000

Current price of NTLJD3182FZTBG is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

NTLJD3182FZTBG Specifications
Type Description
Series:-
Package:Tape & Reel (TR)
Part Status:Obsolete
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:2.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
Rds On (Max) @ Id, Vgs:100mOhm @ 2A, 4.5V
Vgs(th) (Max) @ Id:1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:7.8 nC @ 4.5 V
Vgs (Max):±8V
Input Capacitance (Ciss) (Max) @ Vds:450 pF @ 10 V
FET Feature:Schottky Diode (Isolated)
Power Dissipation (Max):710mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:6-WDFN (2x2)
Package / Case:6-WDFN Exposed Pad
  • Please confirm the specifications of the products when ordering.
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  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
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