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Type | Description |
---|---|
Series: | HEXFET® |
Package: | Tube |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 55 V |
Current - Continuous Drain (Id) @ 25°C: | 28A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4V, 10V |
Rds On (Max) @ Id, Vgs: | 40mOhm @ 17A, 10V |
Vgs(th) (Max) @ Id: | 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 25 nC @ 5 V |
Vgs (Max): | ±16V |
Input Capacitance (Ciss) (Max) @ Vds: | 880 pF @ 25 V |
FET Feature: | - |
Power Dissipation (Max): | 68W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | I-PAK |
Package / Case: | TO-251-3 Short Leads, IPak, TO-251AA |
RES 620M OHM 0.5% 1/2W 1206
CONN RCPT HOUSING 20POS 4.2MM
MOSFET N-CH 55V 28A I-PAK
BRIDGE RECT 1PHASE 600V 3A KBPM