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BSP315PE6327T

BSP315PE6327T

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Part No :

BSP315PE6327T

Manufacturer
IR (Infineon Technologies)
Description
MOSFET P-CH 60V 1.17A SOT223-4
Catalog
Transistors - FETs, MOSFETs - Single
Shipped from
HK warehouse
Expected Shipping Date
Oct 30 - Nov 03 2025
DataSheet
BSP315PE6327T PDF
Availability
0 pieces
Unit Price
$0.00000

Current price of BSP315PE6327T is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

BSP315PE6327T Specifications
Type Description
Series:SIPMOS®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Obsolete
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:1.17A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:800mOhm @ 1.17A, 10V
Vgs(th) (Max) @ Id:2V @ 160µA
Gate Charge (Qg) (Max) @ Vgs:7.8 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:160 pF @ 25 V
FET Feature:-
Power Dissipation (Max):1.8W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-SOT223-4
Package / Case:TO-261-4, TO-261AA
  • Please confirm the specifications of the products when ordering.
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  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
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