STB6N65M2

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Part No :: STB6N65M2

Manufacturer: STMicroelectronics

Description: MOSFET N-CH 650V 4A D2PAK

Catalog: Transistors - FETs, MOSFETs - Single

Shipped from: HK warehouse

Expected Shipping Date: Oct 30 - Nov 03 2025

DataSheet: STB6N65M2 PDF

Availability: 0 pieces

Unit Price: ~~$0.00000~~

Current price of STB6N65M2 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

STB6N65M2 Specifications

Type	Description
Series:	MDmesh™
Package:	Tape & Reel (TR)Cut Tape (CT)
Part Status:	Obsolete
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	650 V
Current - Continuous Drain (Id) @ 25°C:	4A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	10V
Rds On (Max) @ Id, Vgs:	1.35Ohm @ 2A, 10V
Vgs(th) (Max) @ Id:	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	9.8 nC @ 10 V
Vgs (Max):	±25V
Input Capacitance (Ciss) (Max) @ Vds:	226 pF @ 100 V
FET Feature:	-
Power Dissipation (Max):	60W (Tc)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	D2PAK
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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