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FQD10N20TF

FQD10N20TF

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Part No :

FQD10N20TF

Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
MOSFET N-CH 200V 7.6A DPAK
Catalog
Transistors - FETs, MOSFETs - Single
Shipped from
HK warehouse
Expected Shipping Date
Nov 01 - Nov 05 2025
DataSheet
FQD10N20TF PDF
Availability
0 pieces
Unit Price
$0.00000

Current price of FQD10N20TF is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

FQD10N20TF Specifications
Type Description
Series:QFET®
Package:Tape & Reel (TR)
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):200 V
Current - Continuous Drain (Id) @ 25°C:7.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:360mOhm @ 3.8A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:18 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:670 pF @ 25 V
FET Feature:-
Power Dissipation (Max):2.5W (Ta), 51W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D-Pak
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
  • Please confirm the specifications of the products when ordering.
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  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
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