IPB06CN10N G

Part No :: IPB06CN10N G

Manufacturer: IR (Infineon Technologies)

VIGOR # :: 4581130

Description: MOSFET N-CH 100V 100A D2PAK

Catalog: Transistors - FETs, MOSFETs - Single

DataSheet: IPB06CN10N G PDF

Country of origin: -

Date code: -

IPB06CN10N G Specifications

Type	Description
Series:	OptiMOS™
Package:	Tape & Reel (TR)
Part Status:	Obsolete
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	100 V
Current - Continuous Drain (Id) @ 25°C:	100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	10V
Rds On (Max) @ Id, Vgs:	6.2mOhm @ 100A, 10V
Vgs(th) (Max) @ Id:	4V @ 180µA
Gate Charge (Qg) (Max) @ Vgs:	139 nC @ 10 V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	9200 pF @ 50 V
FET Feature:	-
Power Dissipation (Max):	214W (Tc)
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	D²PAK (TO-263AB)
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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Delivery date: usually 2 to 7 working days.
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In Stock: 0

Shipped from

HK warehouse

Expected Shipping Date

Feb 07 - Feb 11 2026

Pricing(USD)

Quantity	Unit Price	Ext. Price

Current price of IPB06CN10N G is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@Vigorcomp.com

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