SI7403BDN-T1-GE3

Part No :: SI7403BDN-T1-GE3

Manufacturer: Vishay / Siliconix

VIGOR # :: 4582035

Description: MOSFET P-CH 20V 8A PPAK1212-8

Catalog: Transistors - FETs, MOSFETs - Single

DataSheet: SI7403BDN-T1-GE3 PDF

Country of origin: -

Date code: -

SI7403BDN-T1-GE3 Specifications

Type	Description
Series:	TrenchFET®
Package:	Tape & Reel (TR)Cut Tape (CT)
Part Status:	Obsolete
FET Type:	P-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	20 V
Current - Continuous Drain (Id) @ 25°C:	8A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	2.5V, 4.5V
Rds On (Max) @ Id, Vgs:	74mOhm @ 5.1A, 4.5V
Vgs(th) (Max) @ Id:	1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	15 nC @ 8 V
Vgs (Max):	±8V
Input Capacitance (Ciss) (Max) @ Vds:	430 pF @ 10 V
FET Feature:	-
Power Dissipation (Max):	3.1W (Ta), 9.6W (Tc)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	PowerPAK® 1212-8
Package / Case:	PowerPAK® 1212-8

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In Stock: 0

Shipped from

HK warehouse

Expected Shipping Date

Oct 23 - Oct 27 2026

Pricing(USD)

Quantity	Unit Price	Ext. Price

Current price of SI7403BDN-T1-GE3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@Vigorcomp.com

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4582035

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